 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2MBI300U2B-060 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 600V / 300A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 600 20 300 600 300 600 1000 +150 -40 to +125 2500 3.5 3.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5), Terminal 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=300mA VGE=15V, IC=300A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=300V IC=300A VGE=15V RG= 9.1 VGE=0V IF=300A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 6.2 6.7 - 2.10 - 2.35 - 1.80 - 2.05 - 23 - 0.40 - 0.22 - 0.16 - 0.48 - 0.07 - 1.90 - 1.95 - 1.60 - 1.65 - - - 0.97 Unit Max. 2.0 400 7.7 2.45 - - - - 1.20 0.60 - 1.20 0.45 2.30 - - - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=300A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.025 Unit Max. 0.125 0.23 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI300U2B-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 750 VGE=20V 15V 600 Collector current : Ic [A] 12V 450 10V Collector current : Ic [A] 600 750 VGE=20V15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 12V 10V 450 300 300 150 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 150 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 750 Tj=25C 600 Collector current : Ic [A] Tj=125C Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10 8 450 6 300 4 Ic=600A Ic=300A Ic=150A 150 2 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Dynamic Gate charge (typ.) Vcc=300V, Ic=300A, Tj= 25C Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Cres Coes 1.0 VGE VCE 0 500 1000 1500 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI300U2B-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1, Tj=125C 1000 toff ton tr tf 1000 ton toff tr 100 100 tf 10 0 150 300 450 600 Collector current : Ic [ A ] 10 0 150 300 450 600 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=300A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 25 ton toff 1000 tr Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=9.1 Eoff(125C) Eon(125C) Eoff(25C) Eon(25C) 20 15 tf 100 10 5 Err(125C) Err(25C) 10 1.0 10.0 Gate resistance : Rg [ ] 100.0 0 0 150 300 450 600 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=300A, VGE=15V, Tj= 125C 40 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 600 Collector current : Ic [ A ] 750 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C 30 20 Eoff 450 300 10 150 Err 0 1.0 10.0 Gate resistance : Rg [ ] 100.0 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] 2MBI300U2B-060 IGBT Module a Forward current vs. Forward on voltage (typ.) chip 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=9.1 750 Forward current : IF [ A ] 600 Tj=25C 450 Tj=125C 100 trr (125C) Irr (125C) Irr (25C) trr (25C) 300 150 0 0 1 2 3 Forward on voltage : VF [ V ] 10 0 150 300 450 600 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 Thermal resistanse : Rth(j-c) [C ] /W FWD 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M233 3-M5 |
Price & Availability of 2MBI300U2B-060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |